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Schottky Diodes
Schottky Diodes

Operating Principle: It leverages the Schottky barrier formed by metal‑semiconductor contact instead of the conventional PN junction.

Key Features: Low power consumption and ultra‑high speed. Low forward voltage drop (approx. 0.4 V) and extremely short reverse recovery time (several nanoseconds).

Typical Applications: Commonly used in high‑frequency, low‑voltage and high‑current rectifier circuits, free‑wheeling diodes and protection diodes.


Directional
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Channel
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Vrwm / Max(V)
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Vbr / Min(V)
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Ir @Vrwm / Max(uA)
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Vc / Typ(V)
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Ipp(A)
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Cj / Typ(pF)
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Cj / Max(pF)
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Vbr / Max(V)
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Ir(uA)
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It(mA)
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Vc(V)
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Ipp(A)
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Ppp(W)
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Vds(V)
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Vgs(V)±
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Id(A)
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Vth(V) / Min
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Vth(V) / Typ
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Vth(V) / Max
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Rdson_10V(mΩ) / Typ
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Rdson_10V(mΩ) / Max
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Rdson_4.5V(mΩ) / Typ
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Rdson_4.5V(mΩ) / Max
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Rdson_2.5V(mΩ) / Typ
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Rdson_2.5V(mΩ) / Max
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ESD
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Vds(V)
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Vgs(V)±
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Id(A)
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Vth(V) / Min
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Vth(V) / Typ
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Vth(V) / Max
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Rdson_10V(mΩ) / Typ
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Rdson_10V(mΩ) / Max
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Rdson_4.5V(mΩ) / Typ
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Rdson_4.5V(mΩ) / Max
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Rdson_2.5V(mΩ) / Typ
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Rdson_2.5V(mΩ) / Max
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ESD
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Vds(V)
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Vgs(V)±
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Id(A)
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Vth(V) / Typ
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Vth(V) / Max
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Rdson_10V(mΩ) / Typ
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Rdson_10V(mΩ) / Max
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Rdson_4.5V(mΩ) / Typ
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Rdson_4.5V(mΩ) / Max
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Rdson_2.5V(mΩ) / Typ
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Rdson_2.5V(mΩ) / Max
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Esd
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Pd(mW)
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Io(mA)
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Vr(V)
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Vf(V)
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Pd(mW)
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Zzt(Ω)
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Zzk(Ω)
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Pd(mW)
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Io(mA)
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Vr(V)
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Vf(V)
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Ir(uA)
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Channel
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Pcm(mW)
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Ic(mA)
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Vcbo(V)
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Vceo(V)
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Vebo(V)
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Hfe / Min
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Hfe / Max
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Vce(sat) (V)
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Pd(mW)
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Vcc(V)
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Io(mA)
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Ii(mA)
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Hfe / Min
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Hfe / Typ
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R1(KΩ)
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R2 (KΩ)
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Package
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Part Number DirectionalChannelChannelChannelPackagePackagePackageVrwm / Max(V)Vbr / Min(V)Ir @Vrwm / Max(uA)Vc / Typ(V)Ipp(A)Cj / Typ(pF)Cj / Max(pF)PackageVbr / Min(V)Vbr / Max(V)Ir(uA)It(mA)Vc(V)Ipp(A)Ppp(W)PackageVds(V)Vgs(V)±Id(A)Vth(V) / MinVth(V) / TypVth(V) / MaxRdson_10V(mΩ) / TypRdson_10V(mΩ) / MaxRdson_4.5V(mΩ) / TypRdson_4.5V(mΩ) / MaxRdson_2.5V(mΩ) / TypRdson_2.5V(mΩ) / MaxESDVds(V)Vgs(V)±Id(A)Vth(V) / MinVth(V) / TypVth(V) / MaxRdson_10V(mΩ) / TypRdson_10V(mΩ) / MaxRdson_4.5V(mΩ) / TypRdson_4.5V(mΩ) / MaxRdson_2.5V(mΩ) / TypRdson_2.5V(mΩ) / MaxESDVds(V)Vgs(V)±Id(A)Vth(V) / MinVth(V) / TypVth(V) / MaxRdson_10V(mΩ) / TypRdson_10V(mΩ) / MaxRdson_4.5V(mΩ) / TypRdson_4.5V(mΩ) / MaxRdson_2.5V(mΩ) / TypRdson_2.5V(mΩ) / MaxEsdPd(mW)Io(mA)Vr(V)Vf(V)Ir(uA)PackagePd(mW)Vz / Nom(V)Vz / Min(V)Vz / Max(V)Zzt(Ω)Zzk(Ω)Ir(uA)PackagePd(mW)Io(mA)Vr(V)Vf(V)Ir(uA)PackageChannelPcm(mW)Ic(mA)Vcbo(V)Vceo(V)Vebo(V)Hfe / MinHfe / MaxVce(sat) (V)PackageChannelPd(mW)Vcc(V)Io(mA)Ii(mA)Hfe / MinHfe / TypR1(KΩ)R2 (KΩ)Package
SESB16WS 2501000600.7100SOD-323
SES1040DF -1000400.6140DFN1006-2
SES1040PF 4101500400.620DFN1608
SES2040PF 302000400.53100DFN1608
SES1040SF -1000400.6140SOD-523
SESB0540WS 200500400.6220SOD-323
SESB5817W 5001000200.751000SOD-123
SESB5817WS 2501000200.751000SOD-323
SESB5818W 5001000300.8751000SOD-123
SESB5818WS 2501000300.8751000SOD-323
SESB5819W 5001000400.91000SOD-123
SESB5819WS 2501000400.91000SOD-323
SESBAS40 2002004010.2SOT-23
SESBAS40-04 2002004010.2SOT-23
SESBAS40-05 2002004010.2SOT-23
SESBAS40-06 2002004010.2SOT-23
SESBAT46W 50015010012SOD-123
SESBAT46WS 15035010012SOD-323
SESBAT54 2001003012SOT-23
SESBAT54A 2001003012SOT-23
SESBAT54AW 2002003012SOT-323
SESBAT54C 2001003012SOT-23
SESBAT54CW 2002003012SOT-323
SESBAT54S 2001003012SOT-23
SESBAT54SW 2002003012SOT-323
SESBAT54V 2002003012SOT-323
SESBAT54W 5001003012SOD-123
SESBAT54WS 2001003012SOD-323
SESBAT54X 1501002112SOD-523
SESRB521BS-30 200200300.51DFN1006
SESRB521BS-40 200200400.43DFN1006
SESRB521CS-30 200200300.5530SOD-923
SESRB521FS-30 100100300.4510DFN0603
SESRB521S-30 150200300.51SOD-523
SESRB521S-40 150200400.545SOD-523
SESRB521V-40 200200400.543SOD-323
SESRB550V-30 2001000300.5230SOD-323
SESRB551V-30 200500300.47100SOD-323
SESRB551V-40 200500400.47100SOT-323
SESRB751S-40 15030400.370.5SOD-523
SESSD103AW 400350400.65SOD-123
SESSD103AWS 200350400.65SOD-323
SESSD103AWT 150350400.65SOD-523
SESSD103BW 400200300.65SOD-123
SESSD103BWS 200200300.65SOD-323
SESSD103CW 400200200.65SOD-123
SESSD103CWS 200200200.65SOD-323
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