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SGT Power MOSFETs
SGT Power MOSFETs

Operating Principle: Based on conventional trench MOSFET, a shield‑gate structure at source potential is introduced at the bottom of the trench.

Key Features: As an advanced MOSFET device, it delivers lower on‑resistance and switching losses compared with conventional trench MOSFETs, breaking through the traditional silicon‑based limits.

Typical Applications: As a mainstream medium‑ and low‑voltage power MOSFET, it is widely deployed in mobile‑phone fast charging, motor drives, power management and other applications.


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Part Number DirectionalChannelChannelChannelPackagePackagePackageVrwm / Max(V)Vbr / Min(V)Ir @Vrwm / Max(uA）Vc / Typ(V)Ipp(A)Cj / Typ(pF）Cj / Max(pF）PackageVbr / Min(V)Vbr / Max(V)Ir(uA)It(mA）Vc(V)Ipp(A)Ppp(W)PackageVds(V)Vgs(V)±Id(A)Vth(V) / MinVth(V) / TypVth(V) / MaxRdson_10V(mΩ) / TypRdson_10V(mΩ) / MaxRdson_4.5V(mΩ) / TypRdson_4.5V(mΩ) / MaxRdson_2.5V(mΩ) / TypRdson_2.5V(mΩ) / MaxESDVds(V)Vgs(V)±Id(A)Vth(V) / MinVth(V) / TypVth(V) / MaxRdson_10V(mΩ) / TypRdson_10V(mΩ) / MaxRdson_4.5V(mΩ) / TypRdson_4.5V(mΩ) / MaxRdson_2.5V(mΩ) / TypRdson_2.5V(mΩ) / MaxESDVds(V)Vgs(V)±Id(A)Vth(V) / MinVth(V) / TypVth(V) / MaxRdson_10V(mΩ) / TypRdson_10V(mΩ) / MaxRdson_4.5V(mΩ) / TypRdson_4.5V(mΩ) / MaxRdson_2.5V(mΩ) / TypRdson_2.5V(mΩ) / MaxEsdPd(mW)Io(mA)Vr(V)Vf(V)Ir(uA)PackagePd(mW)Vz / Nom(V）Vz / Min(V)Vz / Max(V)Zzt(Ω)Zzk(Ω)Ir(uA)PackagePd(mW)Io(mA)Vr(V)Vf(V)Ir(uA)PackageChannelPcm(mW)Ic(mA)Vcbo(V)Vceo(V)Vebo(V)Hfe / MinHfe / MaxVce(sat) (V)PackageChannelPd(mW)Vcc(V)Io(mA)Ii(mA)Hfe / MinHfe / TypR1(KΩ)R2 (KΩ)Package
SEM100GDN40D5 Dual-NPDFN5*6-8100±20401.622.414162023
SEM30GLN45DN3 Dual-NDFN3*3-1030±204511.525.57.27.610
SEM30GLN55D5 Dual-NPDFN5*6-8D30±204511.52.256.57.910.5
SEM30GLN55D5 Dual-NPDFN5*6-8D30±206011.52.23.54.356.9
SEM30GLN90D5 Dual-NPDFN5*6-8D30±2015011.52.21.92.42.63.7
SEM30GLN90D5 Dual-NPDFN5*6-8D30±205011.72.44.15.668.2
SEM100GN40T2 N-ch MOSTO-252100±204011.5214.418.717.723
SEM30GN45D3 N-ch MOSPDFN3.3*3.3-830±204511.52.24.96.57.810.5
SEM40GN45D3 N-ch MOSPDFN3.3*3.3-840±204511.526.47.59.111.8
SEM30GN45D5 N-ch MOSPDFN5*6-830±204511.52.24.96.57.810.5
SEM40GN50D3 N-ch MOSPDFN3.3*3.3-840±205011.5524.566.28.2
SEM30GN50D3 N-ch MOSPDFN3.3*3.3-830±20501.222.44.35.66.58.5
SEM40GN50D5 N-ch MOSPDFN5*6-840±205011.5524.566.28.2
SEM30GN50D5 N-ch MOSPDFN5*6-830±20501.222.44.35.66.58.5
SEM30GN60D3 N-ch MOSPDFN3.3*3.3-830±206011.52.23.44.456.9
SEM30GN60D5 N-ch MOSPDFN5*6-830±206011.52.23.44.456.5
SEM30GN60D5L N-ch MOSPDFN5*6-830±206011.624.16710
SEM40GN90D5 N-ch MOSPDFN5*6-840±20901.21.82.43.244.25.2
SEM100GN90D5 N-ch MOSPDFN5*6-8100±20901.31.536.887.811.4
SEM30GN120D3 N-ch MOSPDFN3.3*3.3-830±2012011.82.21.682.42.83.7
SEM30GN150D5 N-ch MOSPDFN5*6-830±2015011.82.21.682.42.83.7
SEM100GN165D5 N-ch MOSPDFN5*6-8100±2016511.522.53.22.94
SEM40GN320D5 N-ch MOS-40±203201.11.72.40.971.261.251.63
SEM100N03S2G N-ch MOSSOT-23100±203-1.83110140160300
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